IXFN44N50 datasheet(1/4 Pages) IXYS

部件名	IXFN44N50

功能描述	HiPerFET Power MOSFETs

PDF	4 Pages

Scroll/Zoom	100%

制造商	IXYS [IXYS Corporation]

网页	http://www.ixys.com

标志

1 / 4 page

C1 - 184

Symbol

Test Conditions

Maximum Ratings

IXFK

IXFN

V

DSS

T

J

= 25

°C to 150°C

500

V

DGR

T

J

= 25

°C to 150°C; R

GS = 1 MΩ

500

V

GS

Continuous

±20

V

GSM

Transient

±30

V

I

D25

T

C

= 25

°C

44N50

44

A

48N50

48

A

I

DM

T

C

= 25

°C,

44N50

176

A

pulse width limited by T

JM

48N50

192

A

I

AR

T

C

= 25

°C24

24

A

E

AR

T

C

= 25

°C30

30

mJ

dv/dt

I

S

≤ I

DM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,

5

V/ns

T

J ≤ 150°C, RG = 2 Ω

P

D

T

C

= 25

°C

500

520

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6 mm (0.063 in) from case for 10 s

300

-

°C

V

ISOL

50/60 Hz, RMS

t = 1 min

-

2500

V~

I

ISOL ≤ 1 mA

t = 1 s

-

3000

V~

M

d

Mounting torque

0.9/6

1.5/13 Nm/lb.in.

Terminal connection torque

-

1.5/13 Nm/lb.in.

Weight

10

30

g

HiPerFETTM

Power MOSFETs

N-Channel Enhancement Mode

Avalanche Rated, High dv/dt, Low t

rr

Features

l

International standard packages

l

Molding epoxies meet UL 94 V-0

flammability classification

l

SOT-227B miniBLOC with aluminium

nitride isolation

l

Low R

DS (on) HDMOS

TM process

l

Unclamped Inductive Switching (UIS)

rated

l

Fast intrinsic rectifier

Applications

l

DC-DC converters

l

Synchronous rectification

l

Battery chargers

l

Switched-mode and resonant-mode

power supplies

l

DC choppers

l

Temperature and lighting controls

Advantages

l

Easy to mount

l

Space savings

l

High power density

V

DSS

I

D25

R

DS(on)

IXFK / IXFN 44 N50

500 V

44 A 0.12

Ω

IXFK / IXFN 48 N50

500 V

48 A 0.10

Ω

t

rr ≤

≤≤≤≤ 250 ns

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

min.

typ.

max.

V

DSS

V

GS = 0 V, ID = 1 mA

500

V

GS(th)

V

DS

= V

GS, ID = 8 mA

2

4

V

I

GSS

V

GS = ±20 VDC, VDS = 0

±200 nA

I

DSS

V

DS

= 0.8 • V

DSS

T

J = 25°C

400

µA

V

GS = 0 V

T

J = 125°C2

mA

R

DS(on)

V

GS = 10 V, ID = 0.5 • ID25

44N50

0.12

Ω

48N50

0.10

Ω

Pulse test, t

≤ 300 µs, duty cycle d ≤ 2 %

93001I (07/00)

D

S

G

S

G = Gate

D = Drain

S = Source

TAB = Drain

Either Source terminal at miniBLOC can be used

as Main or Kelvin Source

S

G

S

D

S

G

D

TO-264 AA

(IXFK)

miniBLOC, SOT-227 B (IXFN)

E153432

(TAB)

IXYS reserves the right to change limits, test conditions, and dimensions.

类似零件编号 - IXFN44N50

制造商	部件名	数据表	功能描述
IXYS Corporation	IXFN44N50	114Kb / 4P	HiPerFET Power MOSFETs
Inchange Semiconductor ...	IXFN44N50	663Kb / 3P	isc N-Channel MOSFET Transistor
IXYS Corporation	IXFN44N50Q	80Kb / 2P	HiPerFET Power MOSFETs Q-Class
	IXFN44N50Q	572Kb / 4P	HiPerFET Power MOSFETs Q-Class
	IXFN44N50U2	151Kb / 5P	HiPerFET Power MOSFETs

More results

类似说明 - IXFN44N50

制造商	部件名	数据表	功能描述
IXYS Corporation	IXFH10N90	85Kb / 4P	HiPerFET Power MOSFETs
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	IXFA3N80	100Kb / 2P	HiPerFET Power MOSFETs
	IXFK27N80	157Kb / 4P	HiPerFET Power MOSFETs

More results

IXFN44N50 数据表(PDF) 1 Page - IXYS Corporation

IXFN44N50 数据表(HTML) 1 Page - IXYS Corporation

类似零件编号 - IXFN44N50

类似说明 - IXFN44N50

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链接网址

IXFN44N50 数据表(PDF) 1 Page - IXYS Corporation

IXFN44N50 数据表(HTML) 1 Page - IXYS Corporation

类似零件编号 - IXFN44N50

类似说明 - IXFN44N50

Html Pages

1 2 3 4

数据表 下载

链接网址

数据表下载