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ADA4303-2ACPZ-R2 数据表(PDF) 4 Page - Analog Devices

部件名 ADA4303-2ACPZ-R2
功能描述  1:2 Single-Ended, Low Cost Active RF Splitter
PDF  12 Pages
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制造商  AD [Analog Devices]
网页  http://www.analog.com
标志 AD - Analog Devices

ADA4303-2ACPZ-R2 数据表(HTML) 4 Page - Analog Devices

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ADA4303-2
Data Sheet
Rev. A | Page 4 of 12
ABSOLUTE MAXIMUM RATINGS
Table 2.
Parameter
Rating
Supply Voltage
5.5 V
Power Dissipation
See Figure 3
Storage Temperature Range
−65°C to +125°C
Operating Temperature Range
−40°C to +85°C
Lead Temperature (Soldering, 10 sec)
300°C
Junction Temperature
150°C
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This
is a stress rating only; functional operation of the product
at these or any other conditions above those indicated in
the operational section of this specification is not implied.
Operation beyond the maximum operating conditions for
extended periods may affect product reliability.
THERMAL RESISTANCE
θJA is specified for the worst-case conditions; that is, θJA is
specified for a device (including exposed pad) soldered to
the circuit board.
Table 3. Thermal Resistance
Package Type
θJA
Unit
12-Lead LFCSP (exposed pad)
99.2
°C/W
Maximum Power Dissipation
The maximum safe power dissipation in the ADA4303-2
package is limited by the associated rise in junction temp-
erature (TJ) on the die. At approximately 150°C, which is the
glass transition temperature, the plastic changes the properties.
Even temporarily exceeding this temperature limit can change
the stresses that the package exerts on the die, permanently
shifting the parametric performance of the ADA4303-2.
Exceeding a junction temperature of 150°C for an extended
period can result in changes in the silicon devices,
potentially causing failure.
The power dissipated in the package (PD) is the sum of the
quiescent power dissipation and the power dissipated in the
package due to the load drive. The quiescent power is the
voltage between the supply pins (VS) times the quiescent
current (IS). The power dissipated due to the load drive depends
upon the particular application. The power due to load drive is
calculated by multiplying the load current by the associated
voltage drop across the device. RMS voltages and currents must
be used in these calculations.
Airflow increases heat dissipation, effectively reducing θJA. In
addition, more metal directly in contact with the package
leads/exposed pad from metal traces, through-holes, ground,
and power planes reduces the θJA.
Figure 3 shows the maximum safe power dissipation in the
package vs. the ambient temperature for the 12-lead LFCSP
(99.2°C/W) on a JEDEC standard 4-layer board.
0
–40
–20
AMBIENT TEMPERATURE (°C)
0.5
1.0
2.0
1.5
2.5
–60
0
20
40
60
80
100
120
Figure 3. Maximum Power Dissipation vs. Temperature for a 4-Layer Board
ESD CAUTION



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