DA9275.007

19 February 2004

2 (10)

PIN DESCRIPTION

Pin Description

Symbol

x-coordinate

y-coordinate

Note

Crystal/Varactor Oscillator Input

X1

209

161

Voltage Control Input

VC

425

165

Power Supply Ground

VSS

600

175

Buffer Output

OUT

1029

1030

Power Supply Voltage

VDD

841

1016

Tri State

PD

379

1028

Crystal Oscillator Output

X2

197

1030

Note: Because the substrate of the die is internally connected to GND, the die has to be connected to GND or

left floating. Please make sure that GND is the first pad to be bonded. Pick-and-place and all component

assembly are recommended to be performed in ESD protected area.

Note: Pad coordinates are measured from the left bottom corner of the chip to the center of the pads. The

coordinates may vary depending on sawing width and location, however, distances between pads are accurate.

ABSOLUTE MAXIMUM RATINGS

Parameter

Symbol

Conditions

Min

Max

Unit

Note

Supply Voltage

-0.3

6.0

V

Input Pin Voltage

V

Power Dissipation

100

mW

Storage Temperature

-55

120

ESD Rating

HBM

2

kV

RECOMMENDED OPERATION CONDITIONS

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Note

Supply Voltage

2.5

2.8

5.5

V

1)

Supply Current

VDD = 2.8 V

2.3

mA

Operating Temperature

-40

+85

Voltage Control Line

Impedance

MAS9275A,

MAS9275B

1

MΩ

Crystal Pulling Sensitivity

S

30

ppm/pF

Crystal Load Capacitance

MAS9275A1

MAS9275B2

MAS9275B3

MAS9275C2

MAS9275C3

MAS9275C4

8

10

10.5

10

10.5

10.5

pF

2)

2)

2)

Note 1: It is recommend to connect a 1 nF capacitor to the VDD pin (either in a module or in an end

application).