MCC56-12IO8B datasheet(5/6 Pages) IXYS

5 / 6 page

MCC56-12io8B

TSM

FSM

[A]

t [s]

Fig. 1 Surge overload current

TSM, IFSM: Crest value, t: duration

t [ms]

I2t

[A2s]

Fig. 2 I2t versus time (1-10 ms)

Fig. 3 Maximum forward current

at case temperature

TAVM

[A]

C [°C]

1500

1000

500

10-3

10-2

10-1

100

101

VJ = 45°C

VJ = 125°C

50 Hz, 80% V

RRM

R = 0 V

105

103

VJ = 45°C

VJ = 125°C

104

120

100

150

180° sin

120°

60°

30°

100

Fig. 4 Power dissipation vs. onstate current and ambient temperature (per thyristor/diode)

180° sin

120°

60°

30°

100

150

A [°C]

TAVM, IFAVM [A]

150

100

[W]

thJA

[K/W]

0.8

1.2

1.5

2.5

Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current

and ambient temperature

thKA

[K/W]

0.1

0.15

0.2

0.25

0.3

0.4

0.5

0.6

100

150

A [°C]

dAVM [A]

100

tot

[W]

100

200

300

400

600

Circuit

3x MCC56 or

3x MCD56

500

150

G [mA]

[V]

Fig. 5 Gate trigger charact.

100

101

102

103

104

0.1

1: IGT, TVJ = 125°C

2: I

GT, TVJ = 25°C

3: I

GT, TVJ = -40°C

4: P

GAV = 0.5 W

5: P

GM =

5 W

6: P

GM = 10 W

GD, TVJ = 125°C

100

1000

100

1000

Limit

typ.

TVJ = 25°C

G [mA]

[µs]

Fig. 7 Gate trigger delay time

Thyristor

IXYS reserves the right to change limits, conditions and dimensions.

20161222b

Data according to IEC 60747and per semiconductor unless otherwise specified

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