Datasheet

Schottky Barrier Diode

RBQ10BM65AFH

AEC-Q101 Qualified

Application

Dimensions

(Unit : mm)

Land size figure

(Unit : mm)

General rectification

Features

1) Power mold type (TO-252)

2) Cathode common dual type

3) High reliability

Structure

Construction

Taping Dimensions

(Unit : mm)

Silicon epitaxial planar type

Absolute Maximum Ratings

Repetitive Peak Reverse Voltage

V

Reverse Voltage

V

Operating Junction Temperature

°C

Storage Temperature

°C

Electrical Characteristics

Symbol

Min. Typ. Max. Unit

Forward Voltage

-

-

0.69

V

Reverse Current

-

-

0.15

mA

Parameter

Conditions

A

Non-repetitive Forward Current Surge Peak

Average Forward Rectified Current

A

Parameter

Symbol

Conditions

Limits

Unit

Duty≦0.5

65

Direct Reverse Voltage

65

40 to 150

60Hz half sin wave,resistive load,

10

60Hz half sin wave,

-

150

50

-

(2) Cathode

(3) Anode

(1) Anode

TO-252

2.3

1.6

2.3

6.0

1.6

1

2

1

ROHM : TO-252

JEITA : SC-63

: Manufacture Date

2

: Serial number

1/4

2017.08 - Rev.C

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