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AS7C3364PFS36A 数据表(PDF) 3 Page - Alliance Semiconductor Corporation

部件名 AS7C3364PFS36A
功能描述  3.3V 64K X 32/36 pipeline burst synchronous SRAM
PDF  11 Pages
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制造商  ALSC [Alliance Semiconductor Corporation]
网页  https://www.alliancememory.com
标志 ALSC - Alliance Semiconductor Corporation

AS7C3364PFS36A 数据表(HTML) 3 Page - Alliance Semiconductor Corporation

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AS7C3364PFS32A
AS7C3364PFS36A
®
2/1/01
Alliance Semiconductor
P. 3 of 11
Signal descriptions
Absolute maximum ratings
Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of
the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum
rating conditions may affect reliability.
Signal
I/
O
Properties
Description
CLK
I
CLOCK
Clock. All inputs except OE, FT, ZZ, LBO are synchronous to this clock.
A0–A15
I
SYNC
Address. Sampled when all chip enables are active and ADSC or ADSP are asserted.
DQ[a,b,c,d]
I/O SYNC
Data. Driven as output when the chip is enabled and OE is active.
CE0
ISYNC
Master chip enable. Sampled on clock edges when ADSP or ADSC is active. When CE0 is
inactive, ADSP is blocked. Refer to the Synchronous Truth Table for more information.
CE1, CE2
ISYNC
Synchronous chip enables. Active HIGH and active Low, respectively. Sampled on clock
edges when ADSC is active or when CE0 and ADSP are active.
ADSP
ISYNC
Address strobe processor. Asserted LOW to load a new bus address or to enter standby
mode.
ADSC
I
SYNC
Address strobe controller. Asserted LOW to load a new address or to enter standby mode.
ADV
I
SYNC
Advance. Asserted LOW to continue burst read/write.
GWE
ISYNC
Global write enable. Asserted LOW to write all 32/36 bits. When High, BWE and BW[a:d]
control write enable.
BWE
I
SYNC
Byte write enable. Asserted LOW with GWE = HIGH to enable effect of BW[a:d] inputs.
BW[a,b,c,d] ISYNC
Write enables. Used to control write of individual bytes when GWE = HIGH and BWE =
Low. If any of BW[a:d] is active with GWE = HIGH and BWE = LOW the cycle is a write
cycle. If all BW[a:d] are inactive the cycle is a read cycle.
OE
IASYNC
Asynchronous output enable. I/O pins are driven when OE is active and the chip is in read
mode.
LBO
I
STATIC
default =
HIGH
Count mode. When driven High, count sequence follows Intel XOR convention. When
driven Low, count sequence follows linear convention. This signal is internally pulled High.
18
FT
ISTATIC
Flow-through mode.When low, enables single register flow-through mode. Connect to VDD
if unused or for pipelined operation.
ZZ
I
ASYNC
Sleep. Places device in low power mode; data is retained. Connect to GND if unused.
Parameter
Symbol
Min
Max
Unit
Power supply voltage relative to GND
VDD, VDDQ
–0.5
+4.6
V
Input voltage relative to GND (input pins)
VIN
–0.5
VDD + 0.5
V
Input voltage relative to GND (I/O pins)
VIN
–0.5
VDDQ + 0.5
V
Power dissipation
PD
–1.8
W
DC output current
IOUT
–50
mA
Storage temperature (plastic)
Tstg
–65
+150
oC
Temperature under bias
Tbias
–65
+135
oC



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