K6R1016C1C datasheet(1/11 Pages) SAMSUNG

部件名	K6R1016C1C

功能描述	64Kx16 Bit High-Speed CMOS Static RAM(5.0V Operating).

PDF	11 Pages

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制造商	SAMSUNG [Samsung semiconductor]

网页	http://www.samsung.com/Products/Semiconductor

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1 / 11 page

K6R1016C1C-C/C-L, K6R1016C1C-I/C-P

CMOS SRAM

Revision 4.0

- 1 -

September 2001

Document Title

64Kx16 Bit High-Speed CMOS Static RAM(5.0V Operating).

Operated at Commercial and Industrial Temperature Ranges.

Revision History

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the

specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions,

please contact the SAMSUNG branch office near your office, call or contact Headquarters.

Rev.No.

Rev. 0.0

Rev. 1.0

Rev. 2.0

Rev. 2.1

Rev. 2.2

Rev. 3.0

Rev. 3.1

Rev. 4.0

Remark

Preliminary

Final

History

Initial release with preliminary.

Relax DC characteristics.

Add 48-fine pitch BGA.

Changed device part name for FP-BGA.

ex) K6R1016C1C-Z -> K6R1016C1C-F

Changed device ball name for FP-BGA.

Added Data Retention Characteristics.

Add 10ns part.

Delete 20ns speed bin

Item

ICC

12ns

90mA

95mA

15ns

88mA

93mA

20ns

85mA

90mA

Item

Symbol

Z

F

I/O1 ~ I/O8

I/O9 ~ I/O16

I/O1 ~ I/O8

Draft Data

Aug. 5. 1998

Sep. 7. 1998

Sep. 17. 1998

Nov. 5. 1998

Dec. 10. 1998

Mar. 3. 1999

Mar. 3. 2000

Sep.24. 2001

类似零件编号 - K6R1016C1C

制造商	部件名	数据表	功能描述
Samsung semiconductor	K6R1016C1	259Kb / 11P	64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
	K6R1016C1D	259Kb / 11P	64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
	K6R1016C1D-EC10	188Kb / 9P	256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
	K6R1016C1D-EC10	192Kb / 9P	64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
	K6R1016C1D-EI10	188Kb / 9P	256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).

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类似说明 - K6R1016C1C

制造商	部件名	数据表	功能描述
Samsung semiconductor	K6R1016V1D	259Kb / 11P	64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
Samsung semiconductor	K6R1016V1C	307Kb / 11P	64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
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