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MMRF1304LR5 数据表(PDF) 4 Page - NXP Semiconductors |
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MMRF1304LR5 数据表(HTML) 4 Page - NXP Semiconductors |
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4 / 12 page ![]() 4 RF Device Data Freescale Semiconductor, Inc. MMRF1304LR5 TYPICAL CHARACTERISTICS 0.1 100 020 10 VDS, DRAIN--SOURCE VOLTAGE (VOLTS) Figure 2. Capacitance versus Drain--Source Voltage 30 Ciss 10 1 Coss Crss Measured with 30 mV(rms)ac @ 1 MHz, VGS =0 Vdc 40 50 IDQ =10 mA Figure 3. Normalized VGS versus Quiescent Current and Case Temperature TC, CASE TEMPERATURE (C) 1.06 1.04 1.01 1 0.98 0.96 0.93 100 --50 0 --25 25 50 VDD =50 Vdc 150 mA 75 100 mA 10 IDQ (mA) Slope (mV/C) 50 100 150 --2.16 --1.79 --1.76 --1.68 50 mA 0.94 0.95 0.97 0.99 1.02 1.03 1.05 1.07 250 108 90 TJ, JUNCTION TEMPERATURE (C) 107 106 104 110 130 150 170 190 210 230 105 ID =0.55 Amps 0.69 Amps 0.83 Amps VDD =50 Vdc Figure 4. MTTF versus Junction Temperature -- CW Note: MTTF value represents the total cumulative operating time under indicated test conditions. MTTF calculator available at http:/www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. NOTE: For pulse applications or CW conditions, use the MTTF calculator referenced above. |
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