MMRF1306H datasheet(3/14 Pages) NXP

部件名	MMRF1306H

功能描述	RF Power LDMOS Transistors

PDF	14 Pages

Scroll/Zoom	100%

制造商	NXP [NXP Semiconductors]

网页	http://www.nxp.com

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3 / 14 page

MMRF1306HR5 MMRF1306HSR5

RF Device Data

Freescale Semiconductor, Inc.

Table 4. Electrical Characteristics (TA =25C unless otherwise noted) (continued)

Characteristic

Symbol

Min

Typ

Max

Unit

Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD =50 Vdc, IDQ = 100 mA, Pout = 1250 W Peak (250 W Avg.),

f = 230 MHz, 100 sec Pulse Width, 20% Duty Cycle

Power Gain

Gps

23.0

24.0

26.0

Drain Efficiency

D

72.5

74.0

—

Input Return Loss

IRL

—

--14

--10

Table 5. Load Mismatch/Ruggedness (In Freescale Test Fixture, 50 ohm system) IDQ = 100 mA

Frequency

(MHz)

Signal Type

VSWR

Pout

(W)

Test Voltage, VDD

Result

230

Pulse

(100 sec, 20% Duty Cycle)

>65:1 at all

Phase Angles

1500 Peak

(3 dB Overdrive)

No Device Degradation

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