MMRF1306HSR5 datasheet(2/14 Pages) NXP

2 / 14 page

RF Device Data

Freescale Semiconductor, Inc.

MMRF1306HR5 MMRF1306HSR5

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain--Source Voltage

VDSS

--0.5, +133

Vdc

Gate--Source Voltage

VGS

--6.0, +10

Vdc

Storage Temperature Range

Tstg

-- 65 to +150

C

Case Operating Temperature

150

C

Total Device Dissipation @ TC =25C

Derate above 25C

1333

6.67

W/C

Operating Junction Temperature (1)

225

C

Table 2. Thermal Characteristics

Characteristic

Symbol

Value (2)

Unit

Thermal Resistance, Junction to Case

CW: Case Temperature 63C, 1250 W CW, IDQ = 100 mA, 230 MHz

RJC

0.15

C/W

Thermal Impedance, Junction to Case

Pulse: Case Temperature 66C, 1250 W Pulse, 100 sec Pulse Width, 20% Duty Cycle,

IDQ = 100 mA, 230 MHz

ZJC

0.027

C/W

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22--A114)

2, passes 3500 V

Machine Model (per EIA/JESD22--A115)

B, passes 250 V

Charge Device Model (per JESD22--C101)

IV, passes 4000 V

Table 4. Electrical Characteristics (TA =25C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics (3)

Gate--Source Leakage Current

(VGS =5 Vdc, VDS =0 Vdc)

IGSS

—

Adc

Drain--Source Breakdown Voltage

(VGS =0 Vdc, ID = 100 mA)

V(BR)DSS

133

—

Vdc

Zero Gate Voltage Drain Leakage Current

(VDS =50 Vdc, VGS =0 Vdc)

IDSS

—

Adc

Zero Gate Voltage Drain Leakage Current

(VDS = 100 Vdc, VGS =0 Vdc)

IDSS

—

Adc

On Characteristics

Gate Threshold Voltage (3)

(VDS =10 Vdc, ID = 1776 Adc)

VGS(th)

1.7

2.2

2.7

Vdc

Gate Quiescent Voltage

(VDD =50 Vdc, ID = 100 mAdc, Measured in Functional Test)

VGS(Q)

1.9

2.2

2.9

Vdc

Drain--Source On--Voltage (3)

(VGS =10 Vdc, ID =2 Adc)

VDS(on)

—

0.15

—

Vdc

Forward Transconductance

(VDS =10 Vdc, ID =30 Adc)

gfs

—

28.0

—

Dynamic Characteristics (3)

Reverse Transfer Capacitance

(VDS =50 Vdc  30 mV(rms)ac @ 1 MHz, VGS =0 Vdc)

Crss

—

2.8

—

Output Capacitance

(VDS =50 Vdc  30 mV(rms)ac @ 1 MHz, VGS =0 Vdc)

Coss

—

185

—

Input Capacitance

(VDS =50 Vdc, VGS =0 Vdc  30 mV(rms)ac @ 1 MHz)

Ciss

—

562

—

1. Continuous use at maximum temperature will affect MTTF.

2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes -- AN1955.

3. Each side of device measured separately.

(continued)

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