MSC3003 datasheet(1/3 Pages) ASI

部件名	MSC3003

功能描述	NPN SILICON RF POWER TRANSISTOR

PDF	3 Pages

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制造商	ASI [Advanced Semiconductor]

网页	http://www.advancedsemiconductor.com

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1 / 3 page

A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. A

7525 ETHEL AVENUE

• NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

1/3

Specifications are subject to change without notice.

CHARACTERISTICS TC = 25 °C

SYMBOL

NONETEST CONDITIONS

MINIMUM TYPICAL MAXIMUM

UNITS

BVCBO

IC = 1.0 mA

45

V

BVCER

IC = 5.0 mA

RBE = 10

Ω

45

V

BVEBO

IE = 10 mA

3.5

V

ICBO

VCB = 28 V

0.5

mA

hFE

VCE = 5.0 V

IC = 200 mA

30

300

---

COB

VCB = 28 V

f = 1.0 MHz

5.0

pF

PG

ηηηηC

VSWR

VCC = 28 V

POUT = 3.0 W

f = 3.0 GHz PIN = 0.75

W

6.0

30

30:1

dB

%

---

NPN SILICON RF POWER TRANSISTOR

MSC3003

DESCRIPTION:

The

ASI MSC3003 is a common base

transistor capable of providing 3.0 W

Class-C RF output power @ 3.0 GHz.

FEATURES:

• P

G = 6.0 dB min. at 3 W / 3,000 MHz

• Difused Ballast Resistor

• Omnigold™ Metalization System

MAXIMUM RATINGS

IC

60 mA

VCC

30 V

PDISS

10 W @ TC = 25 °C

TJ

-65 °C to +200 °C

TSTG

-65 °C to +200 °C

θθθθ

JC

17 °C/W

PACKAGE STYLE .250 2L FLG

MINIMUM

inches / mm

.740 / 18.80

.128 / 3.25

.245 / 6.22

.028 / 0.71

.110 / 2.79

B

C

D

E

F

G

A

MAXIMUM

.255 / 6.48

.032 / 0.81

.117 / 2.97

.132 / 3.35

inches / mm

.117 / 2.97

H

.560 / 14.22

.570 / 14.48

DIM

K

L

I

J

.790 / 20.07

.225 / 5.72

.003 / 0.08

.810 / 20.57

.235 / 5.97

.007 / 0.18

L

G

I

J

K

H

F

B

E

C

ØD

A

N

M

P

.060 x 45°

CHAMFER

P

N

M

.149 / 3.78

.058 / 1.47

.187 / 4.75

.068 / 1.73

.165 / 4.19

.185 / 4.70

.135 / 3.43

.119 / 3.02

.125 / 3.18

类似零件编号 - MSC3003

制造商	部件名	数据表	功能描述
Advanced Semiconductor	MSC3000	15Kb / 1P	NPN SILICON RF POWER TRANSISTOR
Advanced Semiconductor	MSC3005	16Kb / 1P	NPN SILICON RF POWER TRANSISTOR

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