025

50

75

0

1

2

3

4

Fig.7- Collector Current vs. Switching Loss (Typical)

Tj=125°C

Tj=150°C

Inductive Load

10

30

100

0.1

0.3

1

3

10

30

100

)

Fig.8- Series Gate Impedance vs. Switching Loss (Typical)

Tj=125°C

Tj=150°C

Inductive Load

01

23

4

0

25

50

75

100

125

150

Fig.9- Forward Characteristics of Free Wheeling Diode

(Typical)

Tj=25°C

Tj=125°C

Tj=150°C

025

50

75

10

20

30

40

50

60

70

80

90

100

200

300

Fig.10- FWD Reverse Recovery Characteristics (Typical)

trr

Tj=125°C

Tj=150°C

0

200

400

600

800

0.1

0.3

1

3

10

30

100

300

1000

Fig.11- Reverse Bias Safe Operating Area

IGBT

FWD

10

-5

10

-4

10

-3

10

-2

10

-1

110

1

3x10

-3

1x10

-2

3x10

-2

1x10

-1

3x10

-1

1

3

Time t (s)

Fig.12- Transient Thermal Impedance

1 Shot Pulse

FWD

IGBT