 |
数据搜索系统，热门电子元器件搜索 |
|
|
数据搜索系统，热门电子元器件搜索 |
|
SSM2212RZ-R7 数据表(PDF) 1 Page - Analog Devices |
|
|
|||||||||||||||||||||||||||||
SSM2212RZ-R7 数据表(HTML) 1 Page - Analog Devices |
|
|
1 / 12 page  Audio, Dual-Matched NPN Transistor Data Sheet SSM2212 Rev. C Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibilityis assumedbyAnalogDevicesforitsuse,norforanyinfringementsof patentsorother rightsofthirdpartiesthatmayresultfromitsuse.Specificationssubjecttochangewithoutnotice.No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarksandregisteredtrademarksarethepropertyoftheirrespectiveowners. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 ©2010–2015 Analog Devices, Inc. All rights reserved. Technical Support www.analog.com FEATURES Very low voltage noise: 1 nV/√Hz maximum at 100 Hz Excellent current gain match: 0.5% Low offset voltage (VOS): 200 μV maximum (SOIC) Outstanding offset voltage drift: 0.03 μV/°C High gain bandwidth product: 200 MHz PIN CONNECTIONS C1 1 B1 2 E1 3 NIC 4 C2 8 B2 7 E2 6 NIC 5 SSM2212 NOTES 1. NIC = NO INTERNAL CONNECTION. Figure 1. 8-Lead SOIC_N 12 11 10 1 3 4 9 2 SSM2212 E1A E1B E2B E2A NIC C2 NIC NIC NOTES 1. NIC = NO INTERNAL CONNECTION. Figure 2. 16-Lead LFCSP_WQ GENERAL DESCRIPTION The SSM2212 is a dual, NPN-matched transistor pair that is specifically designed to meet the requirements of ultralow noise audio systems. With its extremely low input base spreading resistance (rbb' is typically 28 Ω) and high current gain (hFE typically exceeds 600 at IC = 1 mA), the SSM2212 can achieve outstanding signal-to-noise ratios. The high current gain results in superior performance compared to systems incorporating commercially available monolithic amplifiers. Excellent matching of the current gain (ΔhFE) to approximately 0.5% and low VOS of less than 10 μV typical make the SSM2212 ideal for symmetrically balanced designs, which reduce high- order amplifier harmonic distortion. Stability of the matching parameters is guaranteed by protection diodes across the base-emitter junction. These diodes prevent degradation of beta and matching characteristics due to reverse biasing of the base-emitter junction. The SSM2212 is also an ideal choice for accurate and reliable current biasing and mirroring circuits. Furthermore, because the accuracy of a current mirror degrades exponentially with mismatches of VBE between transistor pairs, the low VOS of the SSM2212 does not need offset trimming in most circuit applications. The SSM2212 SOIC performance and characteristics are guaranteed over the extended temperature range of −40°C to +85°C. The SSM2212 is available in 8-lead SOIC and 16-lead LFCSP packages. |
类似零件编号 - SSM2212RZ-R7 |
|
类似说明 - SSM2212RZ-R7 |
|
|
|
链接网址 |
| ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 数据表链接 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
Chinese ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
