ASIPT3642 datasheet(1/1 Pages) ASI

部件名	ASIPT3642

功能描述	NPN SILICON RF POWER TRANSISTOR

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制造商	ASI [Advanced Semiconductor]

网页	http://www.advancedsemiconductor.com

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1 / 1 page

A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. A

7525 ETHEL AVENUE

• NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

1/1

Specifications are subject to change without notice.

CHARACTERISTICS TC = 25 °C

SYMBOL

TEST CONDITIONS

MINIMUM TYPICAL MAXIMUM

UNITS

BVCEO

IC = 200 mA

40

V

BVCEX

IC = 200 mA

VBE = -1.5 V

65

V

BVCBO

IC = 500

µA

65

V

ICEO

VCE = 30 V

250

µµµµA

IEBO

VEB = 4.0 V

250

µµµµA

hFE

VCE = 5.0 V

IC = 1.0 A

5.0

---

Cob

VCB = 30 V

f = 1.0 MHz

20

pF

ft

VCE = 28 V

IC = 150 mA

f = 100 MHz

400

MHz

Pout

GP

ηηηη

C

VCE = 28 V

f = 175 MHz

13.5

5.8

70

W

dB

%

NPN SILICON RF POWER TRANSISTOR

PT3642

DESCRIPTION:

The

ASI PT3642 is Designed for

Class A,B,C Amplifier, Oscillator and

Driver Applications Covering 130 to

400MHz.

FEATURES INCLUDE:

• Emitter Ballasted

• Common Emitter Package

MAXIMUM RATINGS

IC

3.0 A

VCE

40 V

PDISS

23 W @ TC = 25 °C

TJ

-65 °C to +200 °C

TSTG

-65 °C to +200 °C

θθθθ

JC

7.6 °C/W

PACKAGE STYLE TO- 60

1 = EMITTER

2 = BASE

3 = COLLECTOR

CASE = EMITTER

类似零件编号 - ASIPT3642

制造商	部件名	数据表	功能描述
Advanced Semiconductor	ASIPT9700	13Kb / 1P	NPN SILICON RF POWER TRANSISTOR
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	ASIPT9704	13Kb / 1P	NPN SILICON RF POWER TRANSISTOR REV. A
	ASIPT9733	13Kb / 1P	NPN SILICON RF POWER TRANSISTOR REV. A

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类似说明 - ASIPT3642

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