STP12NK80Z datasheet(4/15 Pages) STMICROELECTRONICS

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2 Electrical characteristics

STB12NK80Z - STP12NK80Z - STW12NK80Z

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Table 7.

Source drain diode

Table 8.

Gate-source zener diode

(1) ISD ≤10.5 A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

(2) Pulse width limited by safe operating area

(3) Limited only by maximum temperature allowed

(4) Pulsed: pulse duration = 300µs, duty cycle 1.5%

(5) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0

to 80%VDSS

(6)The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but

also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this

respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s

integrity. These integrated Zener diodes thus avoid the usage of external components.

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ISD

ISDMNote 2

Source-drain Current

Source-drain Current (pulsed)

10.5

VSDNote 4

Forward on Voltage

ISD=10.5 A, VGS=0

1.6

trr

Qrr

IRRM

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

ISD=10.5A, di/dt = 100A/µs,

VDD=100 V, Tj=150°C

635

5.9

18.5

µC

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

BVGSO

Note 6

Gate-Source

Breakdown Voltage

Igs=±1mA

(Open Drain)

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