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TLGE174P 数据表(PDF) 2 Page - Toshiba Semiconductor |
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TLGE174P 数据表(HTML) 2 Page - Toshiba Semiconductor |
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2 / 4 page ![]() TLGE174P 2002-09-25 2 Electrical And Optical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Forward voltage VF IF = 20mA ― 2.27 2.8 V Reverse current IR VR = 4V ― ― 50 µA Luminous intensity IV IF = 20mA (Note) 476 1400 ― mcd Peak emission wavelength λp IF = 20mA ― 574 ― nm Spectral line half width ∆λ IF = 20mA ― 11 ― nm Dominant wavelength λd IF = 20mA ― 571 ― nm (Note): Lamps are classified into the following ranks according to their luminous intensity. Measurement tolerance for each limit is ±15%. R: 560 -1120mcd, S: 1000-2000mcd, T: 1800-3600mcd Precaution Please be careful of the followings · Soldering temperature: 260°C max Soldering time: 3 s max (Soldering portion of lead: Up to 2mm from the body of the device) · If the lead is formed, the lead should be formed up to 5mm from the body of the device without forming stress to the resin. Soldering should be performed after lead forming. · This visible LED lamp also emits some IR light. If a photodetector is located near the LED lamp, please ensure that it will not be affected by this IR light. |
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