A3I35D025WN datasheet(8/18 Pages) NXP

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RF Device Data

NXP Semiconductors

A3I35D025WNR1 A3I35D025WGNR1

Table 10. Load Pull Performance — Maximum Efficiency Tuning

VDD =28 Vdc, IDQ1(A) =36 mA, IDQ2(A) = 130 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle

(MHz)

Zsource

()

Zin

()

Max Drain Efficiency

P1dB

Zload (1)

()

Gain (dB)

(dBm)

(W)

D

(%)

AM/PM

()

3200

78.0 – j14.9

89.3 + j9.63

31.4 – j22.6

28.9

41.2

55.7

–9

3400

60.6 + j14.4

64.5 – j22.5

26.7 – j8.05

29.3

41.1

56.4

–6

3600

47.3 + j7.35

57.7 – j16.2

15.1 – j6.90

28.7

41.0

59.2

–8

3800

37.2 – j9.77

48.5 + j0.17

12.3 – j11.0

27.5

41.6

58.1

–7

4000

27.5 – j10.3

40.6 + j2.95

9.72 – j12.6

26.8

41.7

56.2

–9

(MHz)

Zsource

()

Zin

()

Max Drain Efficiency

P3dB

Zload (2)

()

Gain (dB)

(dBm)

(W)

D

(%)

AM/PM

()

3200

78.0 – j14.9

88.3 + j6.72

32.6 – j22.0

27.0

42.0

57.7

–14

3400

60.6 + j14.4

62.8 – j22.2

27.2 – j7.61

27.4

41.8

58.1

–9

3600

47.3 + j7.35

53.9 – j12.9

17.0 – j9.75

26.5

42.3

60.5

–8

3800

37.2 – j9.77

45.7 + j1.91

11.8 – j11.6

25.4

42.4

57.8

–7

4000

27.5 – j10.3

37.1 + j7.45

11.0–j13.2

24.7

42.5

55.1

–12

(1) Load impedance for optimum P1dB efficiency.

(2) Load impedance for optimum P3dB efficiency.

Zsource = Measured impedance presented to the input of the device at the package reference plane.

Zin

= Impedance as measured from gate contact to ground.

Zload = Measured impedance presented to the output of the device at the package reference plane.

Note: Measurement made on a per side basis.

Input Load Pull

Tuner and Test

Circuit

Device

Under

Test

Zsource Zin

Zload

Output Load Pull

Tuner and Test

Circuit

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