BAV20WS-G datasheet(3/4 Pages) VISHAY

3 / 4 page

BAV19WS-G, BAV20WS-G, BAV21WS-G

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Vishay Semiconductors

Rev. 1.7, 12-Jul-17

Document Number: 83423

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Fig. 5 - Leakage Current vs. Junction Temperature

Fig. 6 - Capacitance vs. Reverse Voltage

PACKAGE DIMENSIONS in millimeters (inches): SOD-323

0.1

18862_2

100

1000

120

160

200

Tj - Junction Temperature (°C)

Reverse Voltage

BAV19WS-G VR = 100 V

BAV20WS-G VR = 150 V

BAV21WS-G VR = 200 V

18863

110

0.1

0.8

0.6

0.4

1.4

1.2

1.0

0.2

100

VR - Reverse Voltage (V)

2.0

1.8

1.6

=25

°C

Rev. 6 - Date: 23.Sept.2016

17443

Document no.: S8-V-3910.02-001 (4)

Created - Date: 24.August.2004

Footprint recommendation:

2.50 [0.098]

2.85 [0.112]

1.60 [0.063]

1.95 [0.077]

0.25 [0.010]

0.40 [0.016]

Cathode bar

1.6 [0.063]

0.8 [0.031]

BAV20WS-G 数据表(PDF) 3 Page - Vishay Siliconix

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