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DRAFT DRAFT DRAFT DRAFT DRAFT

DRAFT DRAFT DRAFT DRAFT

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NXP Semiconductors

BGS8M2

SiGe:C low-noise amplifier MMIC with bypass switch for LTE

BGS8M2

All information provided in this document is subject to legal disclaimers.

© NXP B.V. 2018. All rights reserved.

Product data sheet

Rev. 4 — 13 June 2018

COMPANY CONFIDENTIAL

3 / 15

4 Quick reference data

Table 1. Quick reference data

series. Unless otherwise specified.

Symbol Parameter

Conditions

Min

Typ

Max Unit

supply voltage

1.5

-

3.1

V

in gain mode

3.8

5.8

7.8

mA

supply current

-

-

1

µA

in gain mode; f = 1960 MHz

[1] [2] 12.4 14.4 16.4 dB

power gain

in bypass mode; f = 1960 MHz

[1] [2] -4.0

-2.2

-0.7

dB

NF

noise figure

in gain mode; f = 1960 MHz

[1] [3] [2] -

0.85

1.4

dB

input power at 1 dB gain

compression

in gain mode; f = 1960 MHz

[1] [2] -7.5

-3.5

-

dBm

input third-order intercept point

in gain mode; f = 1960 MHz

[1] [2] -1.5

3.5

-

dBm

[1]

E-UTRA operating band 2 (1930 MHz to 1990 MHz).

[2]

Guaranteed by device design; not tested in production.

[3]

PCB losses are subtracted.

5 Ordering information

Table 2. Ordering information

Package

Type number

Name

Description

Version

BGS8M2

XSON6

plastic extremely thin small outline package; no leads; 6 terminals;

body 1.1 x 0.7 x 0.37 mm

SOT1232

OM17006

EVB

BGS8M2 evaluation board

-

6 Marking

Table 3. Marking codes

Type number

Marking code

BGS8M2

N