NXP Semiconductors

FXPQ3115BV

FXPQ3115BVSDS

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Short data sheet: technical data

Rev. 1 — 9 October 2017

7 / 14

8.3 Electrical characteristics

Table 6. Electrical characteristics

Symbol

Parameter

Test conditions

Min

Typ

Max

Unit

I/O supply voltage

—

1.62

1.8

3.6

V

Operating supply voltage

—

1.95

2.5

3.6

V

Highest speed mode

oversample = 1

—

8.5

—

µA

Standard mode oversample

= 16

—

40

—

µA

Integrated current 1 update

per second

High resolution mode

oversample = 128

—

265

—

µA

Max current during

acquisition and conversion

During acquisition/

conversion

—

2

—

mA

Supply current drain in

STANDBY mode

STANDBY mode selected

SBYB = 0

—

2

—

µA

VIH

Digital high level input

voltage

SCL, SDA

—

0.75

—

—

VIL

Digital low level input voltage

SCL, SDA

—

—

—

0.3

VOH

High level output voltage

INT1, INT2

0.9

—

—

VOL

Low level output voltage

INT1, INT2

—

—

0.1

VOLS

Low level output voltage

SDA

—

—

0.1

High speed mode

—

—

60

ms

Turn-on time [1][2][3]

High resolution mode

—

—

1000

ms

Operating temperature range —

−40

25

+85

°C

—

—

0x60

Hex

The device uses 7-bit addressing and does not acknowledge general call address 000 0000. Slave address has been set

to 60h or 110 0000. 8-bit read is C1h, 8-bit write is C0h.

[1]

Time to obtain valid data from STANDBY mode to ACTIVE mode

[2]

High speed mode is achieved by setting the oversample rate of 1x.

[3]

High resolution mode is achieved by setting the oversample to 128x.