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MPKC2SA 数据表(PDF) 2 Page - MagnaChip Semiconductor. |
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MPKC2SA 数据表(HTML) 2 Page - MagnaChip Semiconductor. |
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2 / 5 page ![]() Mar. 2013. Version 2.0 MagnaChip Semiconductor Ltd. 2 Electrical Characteristics @Tc = 25oC(unless otherwise specified) Characteristics Conditions Symbol Min. Typ. Max. Unit Cathode Anode Breakdown Voltage IR=100uA VR 400 - - V Diode Maximum Forward Voltage IF=150A TC=25℃ VFM - 1.0 1.3 V TC=100℃ - 0.9 - Diode Peak Reverse Recovery Current Tc=100℃, VRRM applied TC=100℃ IRRM - - 1.0 mA Diode Reverse Recovery Time IF =1A,VR=30V di/dt = -300A/uS TC=25℃ trr - 35 50 ns Diode Reverse Recovery Time IF =150A,VR=200V di/dt = -300A/uS TC=25℃ trr - 80 - ns TC=100℃ - 110 - Thermal Characteristics Characteristics Conditions Symbol Min. Typ. Max. Unit Thermal Resistance(Isolation Type) Junction to Case Rth(j-c) - - 0.25 ℃/W |
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