QSL9

Transistors

Rev.A

2/4

Absolute maximum ratings (Ta=25

°C)

Tr1

Parameter

Symbol

Pc

Tj

Tstg

Limits

−15

−12

−6

−1.5

0.9

150

−40 to +125

−3

∗2

∗1

Unit

V

V

V

A

A

°C

°C

∗1 Single pulse, Pw=1ms.

∗3 Each terminal mounted on a recommended.

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Power dissipation

Junction temperature

Range of storage temperature

W/ELEMENT

+

+

Di2

Average rectified forward current

∞)

Reverse voltage (DC)

Junction temperature

Range of storage temperature

Parameter

Symbol

To

Tstg

Limits

700

3

0.7

20

25

125

−40 to +125

Unit

ma

A

V

V

°C

°C

Power dissipation

Peak reverse voltage

+

+

Tr1 & Di2

Parameter

Symbol

Limits

1.25

0.5

Unit

W/TOTAL

W/TOTAL

Total power dissipation

∗2

∗1

∗1 Each terminal mounted on a recommended.

+

+

Electrical characteristics (Ta=25

°C)

Tr1

Transition frequency

Collector-emitter breakdown voltage

Collector-base breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

Collector-emitter saturation voltage

DC current gain

Collector output capacitance

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

−

400

−

MHz

−12

−−

V

=−1mA

−15

−−

V

=−10µA

−6

−−

V

=−10µA

−−

−100

nA

=−15V

−−

−100

nA

=−6V

−−110

−200

mV

270

−

680

−

Cob

−

12

−

pF

Di2

Parameter

Min.

Typ.

Max.

Unit

Conditions

−

490

−

mV

Symbol

−

−−

−

200

µA

Forward voltage

Reverse current

Reverse recovery time

trr

9

ns