MMF80R650PBTH datasheet(2/10 Pages) MGCHIP

部件名	MMF80R650PBTH

功能描述	800V 0.65ohm N-channel MOSFET

PDF	10 Pages

Scroll/Zoom	100%

制造商	MGCHIP [MagnaChip Semiconductor.]

网页	http://www.magnachip.co.kr

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2 / 10 page

MMF80R650PB Datasheet

Jan. 2018 Revision 1.0

MagnaChip Semiconductor Ltd.

Parameter

Symbol

Rating

Unit

Note

Drain

– Source voltage

VDSS

800

Gate

– Source voltage

VGSS

±30

Continuous drain current

(1)

TC=25

5.05

TC=100

Pulsed drain current

(2)

IDM

Power dissipation

Single - pulse avalanche energy

EAS

340

MOSFET dv/dt ruggedness

dv/dt

V/ns

Diode dv/dt ruggedness

(3)

dv/dt

V/ns

Storage temperature

Tstg

-55 ~150

Maximum operating junction

temperature

150

ID limited by maximum junction temperature.

Pulse width tP limited by Tj,max

ISD ≤ ID, VDS peak ≤ V(BR)DSS

Parameter

Symbol

Value

Unit

Thermal resistance, junction-case max

Rthjc

3.9

oC/W

Thermal resistance, junction-ambient max

Rthja

62.5

oC/W

 Thermal Characteristics

 Absolute Maximum Rating (Tc=25oC unless otherwise specified)

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