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STP40N20 数据表(PDF) 3 Page - STMicroelectronics

部件名 STP40N20
功能描述  N-CHANNEL 200V - 0.038 OHM - 40A TO-220/TO-247/D2PAK LOW GATE CHARGE STripFET MOSFET
PDF  13 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STP40N20 数据表(HTML) 3 Page - STMicroelectronics

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STB40N20 - STP40N20 - STW40N20
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 6: On/Off
Table 7: Dynamic
Table 8: Source Drain Diode
(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(2) Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
Breakdown Voltage
ID = 1mA, VGS = 0
200
V
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
10
µA
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20V
±100
nA
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
2
3
4
V
RDS(on)
Static Drain-source On
Resistance
VGS = 10V, ID = 20 A
0.038
0.045
Ω
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs (1)
Forward Transconductance
VDS = 15 V, ID=20 A
30
S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25V, f = 1 MHz, VGS = 0
2500
510
78
pF
pF
pF
td(on)
tr
td(off)
tr
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
VDD = 100 V, ID = 20 A,
RG= 4.7 Ω VGS = 10 V
(Resistive Load see, Figure 17)
20
44
74
22
ns
ns
ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 160V, ID = 40 A,
VGS = 10V
75
13.2
35.5
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
ISDM (2)
Source-drain Current
Source-drain Current (pulsed)
40
160
A
A
VSD (1)
Forward On Voltage
ISD = 20 A, VGS = 0
1.5
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 20 A, di/dt = 100A/µs
VDD = 100V, Tj = 25°C
(see test circuit, Figure 18)
192
922
9.6
ns
nC
A
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 20 A, di/dt = 100A/µs
VDD = 100V, Tj = 150°C
(see test circuit, Figure 18)
242
1440
11.9
ns
nC
A



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