STS8DNH3LL datasheet(2/9 Pages) STMICROELECTRONICS

部件名	STS8DNH3LL

功能描述	DUAL N-CHANNEL 30V - 0.018 OHM - 8A SO-8 LOW GATE CHARGE STripFET III POWER MOSFET

PDF	9 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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2 / 9 page

STS8DNH3LL

2/9

TAB.1 THERMAL DATA

(*) When mounted on 1 inch2 FR-4 board, 2 oz of Cu, t

≤ 10s

ELECTRICAL CHARACTERISTICS (Tj = 25 °C unless otherwise specified)

TAB.2 OFF

TAB.3 ON (*)

TAB.4 DYNAMIC

Rthj-amb

Tstg

(*)Thermal Resistance Junction-ambient

Maximum Operating Junction Temperature

Storage Temperature

Max

62.5

150

-55 to 150

°C/W

°C

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

Breakdown Voltage

ID = 250 µA, VGS = 0

IDSS

Zero Gate Voltage

Drain Current (VGS = 0)

VDS = Max Rating

VDS = Max Rating TC = 125°C

µA

IGSS

Gate-body Leakage

Current (VDS = 0)

VGS = ± 16 V

±100

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VGS(th)

Gate Threshold Voltage

VDS = VGS

ID = 250 µA

RDS(on)

Static Drain-source On

Resistance

VGS = 10 V

ID = 4 A

VGS = 4.5 V

ID = 4 A

0.018

0.020

0.022

0.025

Ω

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

gfs (*)

Forward Transconductance

VDS=15 V

ID =4 A

8.5

Ciss

Coss

Crss

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

VDS = 25V, f = 1 MHz, VGS = 0

857

147

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