STTH12R06DI datasheet(2/11 Pages) STMICROELECTRONICS

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Charactersitics

STTH12R06

2/11

Charactersitics

To evaluate the conduction losses use the following equation:

P = 1.16 x IF(AV) + 0.053 IF

(RMS)

Table 1.

Absolute Ratings (limiting values)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

600

IF(RMS)

RMS forward voltage

TO-220AC / TO-220FPAC / D2PAK

TO-220AC Ins.

IF(AV)

Average forward current

δ =

0.5

TO-220AC / D2PAK

Tc = T125° C

TO-220FPAC

Tc = 50° C

TO-220AC Ins.

Tc = 80° C

IFSM

Surge non repetitive forward current

tp = 10 ms sinusoidal

100

Tstg

Storage temperature range

-65 to + 175

°C

Maximum operating junction temperature

175

°C

Table 2.

Thermal Resistance

Symbol

Parameter

Value (max).

Unit

Rth(j-c)

Junction to case

TO-220AC / D2PAK

1.7

°C/W

TO-220FPAC

4.4

TO-220AC Ins.

3.3

Table 3.

Static Electrical Characteristics

Symbol

Parameter

Test conditions

Min.

Typ

Max.

Unit

Reverse leakage current

Tj = 25° C

VR = VRRM

µA

Tj = 125° C

600

Forward voltage drop

Tj = 25° C

IF = 12 A

2.9

Tj = 125° C

1.4

1.8

Table 4.

Dynamic Characteristics

Symbol

Parameter

Test conditions

Min Typ Max

Unit

trr

Reverse recovery time

Tj = 25° C

IF = 0.5 A Irr = 0.25 A IR = 1 A

IF = 1 A dIF/dt = -50 A/µs VR = 30 V

IRM

Reverse recovery current

Tj = 125° C

IF = 12 A

VR = 400 V

dIF/dt = -200 A/µs

7.0

8.4

S factor Softness factor

0.2

Qrr

Reverse recovery charges

180

tfr

Forward recovery time

Tj = 25° C

IF = 12 A

dIF/dt = 96 A/µs

VFR = 1.1 x VFmax

200

VFP

Forward recovery voltage

5.5

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