TC1302A datasheet(4/26 Pages) MICROCHIP

4 / 26 page

TC1302A/B

DS21333B-page 4

TEMPERATURE SPECIFICATIONS

Shutdown Supply Current

TC1302A

IIN_SHDNA

—58

µA

SHDN2 = GND

Shutdown Supply Current

TC1302B

IIN_SHDNB

—

0.1

µA

SHDN1 = SHDN2 = GND

Power Supply Rejection Ratio

PSRR

—

≤ 100 Hz, IOUT1 = IOUT2 = 50 mA,

CIN = 0 µF

Output Noise

—

830

—

nV/(Hz)½ f

≤ 1kHz, IOUT1 = IOUT2 = 50 mA,

CIN = 0 µF

Output Short Circuit Current (Average)

VOUT1

IOUTsc1

—

200

—

RLOAD1 ≤ 1Ω

VOUT2

IOUTsc2

—

140

—

RLOAD2 ≤ 1Ω

SHDN Input High Threshold

VIH

——

%VIN

VIN = 2.7V to 6.0V

SHDN Input Low Threshold

VIL

——

%VIN

VIN = 2.7V to 6.0V

Wake Up Time (From SHDN

mode), (VOUT2)

tWK

—5.3

µs

VIN = 5V, IOUT1 = IOUT2 = 30 mA,

See Figure 5-1

Settling Time (From SHDN mode),

(VOUT2)

—50

—

µs

VIN = 5V, IOUT1 = IOUT2 = 50 mA,

See Figure 5-2

Thermal Shutdown Die

Temperature

TSD

—

150

—

°C

VIN = 5V, IOUT1 = IOUT2 = 100 µA

Thermal Shutdown Hysteresis

THYS

—10

—

°C

VIN = 5V

Electrical Specifications: Unless otherwise indicated, all limits are specified for: VIN = +2.7V to +6.0V.

Parameters

Sym

Min

Typ

Max

Units

Conditions

Temperature Ranges

Operating Junction Temperature Range

-40

—

+125

°C

Steady State

Storage Temperature Range

-65

—

+150

°C

Maximum Junction Temperature

—

+150

°C

Transient

Thermal Package Resistances

Thermal Resistance, MSOP8

θJA

—

208

—

°C/W

Typical 4-Layer Board

Thermal Resistance, DFN8

θJA

—

°C/W

Typical 4-Layer Board with Vias

DC CHARACTERISTICS (Continued)

Electrical Specifications: Unless otherwise noted, VIN = VR +1V, IOUT1 = IOUT2 = 100 µA, CIN = 4.7 µF,

COUT1 = COUT2 = 1 µF, CBYPASS = 10 nF, SHDN > VIH, TA = +25°C.

Boldface type specifications apply for junction temperatures of -40°C to +125°C.

Parameters

Sym

Min

Typ

Max

Units

Conditions

Note

The minimum VIN has to meet two conditions: VIN ≥ 2.7V and VIN ≥ VR + VDROPOUT.

VR is defined as the higher of the two regulator nominal output voltages (VOUT1 or VOUT2).

TCVOUT = ((VOUTmax - VOUTmin) * 10

6)/(V

OUT * ΔT).

Regulation is measured at a constant junction temperature using low duty-cycle pulse testing. Load regulation is tested

over a load range from 0.1 mA to the maximum specified output current. Changes in output voltage due to heating

effects are covered by the thermal regulation specification.

Thermal regulation is defined as the change in output voltage at a time t after a change in power dissipation is applied,

excluding load or line regulation effects. Specifications are for a current pulse equal to ILMAX at VIN = 6V for t = 10 msec.

Dropout voltage is defined as the input-to-output voltage differential at which the output voltage drops 2% below its

value measured at a 1V differential.

The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction

temperature and the thermal resistance from junction to air (i.e., TA, TJ, θJA). Exceeding the maximum allowable power

dissipation causes the device to initiate thermal shutdown.

TC1302A 数据表(PDF) 4 Page - Microchip Technology

TC1302A 数据表(HTML) 4 Page - Microchip Technology

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26

数据表下载