TPV385 datasheet(1/1 Pages) ASI

部件名	TPV385

功能描述	NPN SILICON RF POWER TRANSISTOR

PDF	1 Pages

Scroll/Zoom	100%

制造商	ASI [Advanced Semiconductor]

网页	http://www.advancedsemiconductor.com

标志

1 / 1 page

A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. A

7525 ETHEL AVENUE

• NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

1/1

Specifications are subject to change without notice.

CHARACTERISTICS TC = 25 OC

SYMBOL

NONETEST CONDITIONS

MINIMUM TYPICAL MAXIMUM

UNITS

BVCEO

IC = 50 mA

35

V

BVCER

IC = 50 mA

RBE = 10

Ω

60

V

BVCBO

IC = 50 mA

65

V

BVEBO

IE = 10 mA

4.0

V

hFE

VCE = 5.0 V

IC = 1.0 A

20

100

---

Cob

VCB = 30 V

f = 1.0 MHz

65

85

pF

GP

IMD1

VCE = 28 V

Pout = 14 W

f = 225 MHz

14

15

-53

dB

ψ

VCE = 28 V

ALL PHASEANGLES

f = 225 MHz

Pout = 14 W

LOAD

VSWR =

∝:1

NO DEGRADATION IN OUTPUT POWER

NPN SILICON RF POWER TRANSISTOR

TPV385

DESCRIPTION:

The ASI

TPV385 is Designed for

Operation in Band III TV Transposers

and Transmitter Amplifiers from

170 to 230 MHz.

FEATURES INCLUDE:

•••• Gold Metalization

• Emitter Ballast Resistors

• Internal Input Matching

• Common Emitter

MAXIMUM RATINGS

IC

10 A (CONT)

VCB

65 V

VCE

35 V

TJ

-65 °C to +200 °C

TSTG

-65 °C to +200 °C

θθθθ

JC

1.5 °C/W

PACKAGE STYLE 500 6L FLG

1 = COLLECTOR

2 = BASE

3 & 4 = EMITTER

类似零件编号 - TPV385

制造商	部件名	数据表	功能描述
Advanced Semiconductor	TPV387	28Kb / 2P	NPN SILICON RF POWER TRANSISTOR

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