MDF9N50F datasheet(2/6 Pages) MGCHIP

2 / 6 page

Jun 2018. Version 1.1

MagnaChip Semiconductor Ltd.

Ordering Information

Part Number

Temp. Range

Package

Packing

RoHS Status

MDF9N50FTH

-55~150

TO-220F

Tube

Halogen Free

Electrical Characteristics (Ta =25

oC)

Characteristics

Symbol

Test Condition

Min

Typ

Max

Unit

Static Characteristics

Drain-Source Breakdown Voltage

BVDSS

ID = 250μA, VGS = 0V

500

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250μA

2.5

4.5

Drain Cut-Off Current

IDSS

VDS = 500V, VGS = 0V

μA

Gate Leakage Current

IGSS

VGS = ±30V, VDS = 0V

100

Drain-Source ON Resistance

RDS(ON)

VGS = 10V, ID = 4.0A

0.75

0.97

Forward Transconductance

gfs

VDS = 30V, ID = 4.0A

4.2

Dynamic Characteristics

Total Gate Charge

VDS = 400V, ID = 8.0A, VGS = 10V

(3)

16.3

Gate-Source Charge

Qgs

5.8

Gate-Drain Charge

Qgd

6.1

Input Capacitance

Ciss

VDS = 25V, VGS = 0V, f = 1.0MHz

781

Reverse Transfer Capacitance

Crss

1.83

Output Capacitance

Coss

96.1

Turn-On

Delay Time

td(on)

VGS = 10V, VDS = 250V, ID = 8.0A,

RG = 25Ω

(3)

20.0

Rise Time

47.5

Turn-Off Delay Time

td(off)

28.0

Fall Time

24.0

Drain-Source Body Diode Characteristics

Maximum Continuous Drain to Source

Diode Forward Current

8.0

Source-Drain Diode Forward Voltage

VSD

IS = 8.0A, VGS = 0V

1.4

Body Diode Reverse Recovery Time

trr

IF = 8.0A, dl/dt = 100A/μs

(3)

94.5

Body Diode Reverse Recovery Charge

Qrr

0.24

μC

Note :

1. Pulse width is based on RθJC & RθJA and the maximum allowed junction temperature of 150°C.

. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature T

J(MAX)=150°C.

3. ISD ≤8.0A, di/dt≤200A/us, VDD=50V, Rg =25Ω, Starting TJ=25°C

4. L=6.5mH, IAS=8.0A, VDD=50V, Rg =25Ω, Starting TJ=25°C

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