Jun. 2018 Version 1.3

MagnaChip Semiconductor Ltd.

2

Ordering Information

Part Number

Temp. Range

Package

Packing

RoHS Status

MDP5N50FTH

-55~150

TO-220

Tube

Halogen Free

MDF5N50FTH

-55~150

TO-220F

Tube

Halogen Free

Electrical Characteristics (Ta =25

Characteristics

Symbol

Test Condition

Min

Typ

Max

Unit

Static Characteristics

Drain-Source Breakdown Voltage

500

-

-

V

Gate Threshold Voltage

2.5

-

4.5

Drain Cut-Off Current

-

-

10

μA

Gate Leakage Current

-

-

100

nA

Drain-Source ON Resistance

1.25

1.58

Ω

Forward Transconductance

-

3.3

-

S

Dynamic Characteristics

Total Gate Charge

(3)

-

12.1

15.73

nC

Gate-Source Charge

-

3.6

-

Gate-Drain Charge

-

4.3

-

Input Capacitance

-

500

650

pF

Reverse Transfer Capacitance

-

1.5

2.25

Output Capacitance

-

65

84.5

Turn-On Delay Time

(3)

-

23

48.3

ns

Rise Time

-

30

60

Turn-Off Delay Time

-

37

77.7

Fall Time

-

29

60.9

Drain-Source Body Diode Characteristics

Maximum Continuous Drain to

Source Diode Forward Current

-

4.5

-

A

Source-Drain Diode Forward

Voltage

-

1.4

V

Body Diode Reverse Recovery

Time

(3)

-

80

ns

Body Diode Reverse Recovery

Charge

-

1.6

μC

Note :

1. Pulse width

is based on R θJC & R θJA and the maximum allowed junction temperature of 150°C.

2. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature TJ(MAX)=150°C.

3.

4. L=20.5mH,