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UR5517L-SM2-R 数据表(PDF) 4 Page - Unisonic Technologies

部件名 UR5517L-SM2-R
功能描述  3A DDR BUS TERMINATION
PDF  9 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

UR5517L-SM2-R 数据表(HTML) 4 Page - Unisonic Technologies

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UR5517
LINEAR INTEGRATED CIRCUIT
UNISONIC TECHNOLOGIES CO., LTD
4 of 9
www.unisonic.com.tw
QW-R102-041.H
ABSOLU T E M AX I M U M RAT I N G (unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Supply Voltage(VIN,VLDOIN,VDDQSNS,S3,S5)
-0.3 ~ 6
V
Power Ground Output for the VTT Output
PGND
-0.3 ~ 0.3
V
Output Voltage(VTT, VTTREF)
VTT, VTTREF
-0.3 ~ VLDOIN+0.3
V
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +160
°C
Note:
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
RECOM M EN DED OPERAT I N G CON DI T I ON S (N ot e 1 , 2 )
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
Input Voltage
VIN
3
5.5
V
STR and Shutdown Voltage
S3,S5
-0.1
5.5
V
VDDQ Sense Input
VDDQSNS
1.3
3.6
V
Power Supply for the VTT and VTTREF Output Stage
VLDOIN
1.2
3.6
V
Power Ground Output for the VTT Output
PGND
-0.1
0.1
V
Operating Temperature
TA
-40
+85
°C
1. All voltage values are with respect to the network ground terminal unless otherwise noted.
Note:
2. Please always keep VLDOIN,VTTSNS,VDDQSNS,S3,S5 lower than VIN on operation.
ELECT RI CAL CH ARACT ERI ST I CS
(VIN=5V, VLDOIN=VDDQSNS=2.5V, TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
IVIN
S5=Hi,S3=Hi, no load(Normal)
0.5
0.8
2
mA
IVINSTB
S5=Hi,S3=Lo, no load(Standby)
110
200
uA
Current of VIN
IVINSDN
S5=Lo,S3=Lo, no load(Shutdown)
1
uA
IVLDOIN
S5=Hi,S3=Hi, no load(Normal)
0.03
2
mA
IVLDOINSTB S5=Hi,S3=Lo, no load(Standby)
0.1
10
uA
Current of VLDOIN
IVLDOINSDN S5=Lo,S3=Lo, no load(Shutdown)
0.1
1
uA
Input Impedance of VDDQSNS
ZVDDQSNS S5=Hi,S3=Hi
200
k
Input Current of VTTSNS
IVTTSNS
S5=Hi,S3=Hi
0.3
1
uA
DDR1(VLDOIN=VDDQSNS=2.5V)
1.25
DDR2(VLDOIN=VDDQSNS=1.8V)
0.9
Output Voltage of VTT
VTT
DDR3(VLDOIN=VDDQSNS=1.5V)
0.75
V
IVTT =0
-20
20
I
VTT <
∣ 1.5A
-30
30
Load Regulation of VTT
(VTTREF-VTT)
VOSVTT
I
VTT <3A
-40
40
mV
VTT=VDDQSNS/2*0.95,PGOOD=HI
3
4
Source Current Limit of VTT
IVTTOCLSRC
VTT=0
1.5
2
A
VTT=VDDQSNS/2*1.05,PGOOD=HI
3
4
Sink Current Limit of VTT
IVTTOCLSNK
VTT=VDDQSNS
1.5
2
A
Leakage Current of VTT
IVTTLK
S5=Hi,S3=Lo
0.01
uA
Discharge Current of VTT
IVTTDIS
S5=Lo, VDDQSNS=0V,VTT=0.5V
10
20
mA
DDR1(VLDOIN=VDDQSNS=2.5V)
1.25
DDR2(VLDOIN=VDDQSNS=1.8V)
0.9
Output Voltage of VTTREF
VTTREF
DDR3(VLDOIN=VDDQSNS=1.5V)
0.75
V
Load Regulation of VTTREF
∆VTTREF
I
VTTREF <
∣ 10mA
-20
20
mV
High Level Input Voltage
VIH
S3 & S5 pin
1.6
Low Level Input Voltage
VIL
S3 & S5 pin
1
V
Logic Input Leakage Current
IILEAK
S3 & S5 pin
-1
1
uA
Thermal Shutdown Temperature
TSD
VIN=3V~5.5V
160
Thermal Shutdown Hysteresis
∆TSD
VIN=3V~5.5V
20
°C



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