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UR5517L-HM2-R 数据表(PDF) 4 Page - Unisonic Technologies |
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UR5517L-HM2-R 数据表(HTML) 4 Page - Unisonic Technologies |
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4 / 9 page ![]() UR5517 LINEAR INTEGRATED CIRCUIT UNISONIC TECHNOLOGIES CO., LTD 4 of 9 www.unisonic.com.tw QW-R102-041.H ABSOLU T E M AX I M U M RAT I N G (unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Supply Voltage(VIN,VLDOIN,VDDQSNS,S3,S5) -0.3 ~ 6 V Power Ground Output for the VTT Output PGND -0.3 ~ 0.3 V Output Voltage(VTT, VTTREF) VTT, VTTREF -0.3 ~ VLDOIN+0.3 V Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +160 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. RECOM M EN DED OPERAT I N G CON DI T I ON S (N ot e 1 , 2 ) PARAMETER SYMBOL MIN TYP MAX UNIT Input Voltage VIN 3 5.5 V STR and Shutdown Voltage S3,S5 -0.1 5.5 V VDDQ Sense Input VDDQSNS 1.3 3.6 V Power Supply for the VTT and VTTREF Output Stage VLDOIN 1.2 3.6 V Power Ground Output for the VTT Output PGND -0.1 0.1 V Operating Temperature TA -40 +85 °C 1. All voltage values are with respect to the network ground terminal unless otherwise noted. Note: 2. Please always keep VLDOIN,VTTSNS,VDDQSNS,S3,S5 lower than VIN on operation. ELECT RI CAL CH ARACT ERI ST I CS (VIN=5V, VLDOIN=VDDQSNS=2.5V, TA=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT IVIN S5=Hi,S3=Hi, no load(Normal) 0.5 0.8 2 mA IVINSTB S5=Hi,S3=Lo, no load(Standby) 110 200 uA Current of VIN IVINSDN S5=Lo,S3=Lo, no load(Shutdown) 1 uA IVLDOIN S5=Hi,S3=Hi, no load(Normal) 0.03 2 mA IVLDOINSTB S5=Hi,S3=Lo, no load(Standby) 0.1 10 uA Current of VLDOIN IVLDOINSDN S5=Lo,S3=Lo, no load(Shutdown) 0.1 1 uA Input Impedance of VDDQSNS ZVDDQSNS S5=Hi,S3=Hi 200 k Ω Input Current of VTTSNS IVTTSNS S5=Hi,S3=Hi 0.3 1 uA DDR1(VLDOIN=VDDQSNS=2.5V) 1.25 DDR2(VLDOIN=VDDQSNS=1.8V) 0.9 Output Voltage of VTT VTT DDR3(VLDOIN=VDDQSNS=1.5V) 0.75 V IVTT =0 -20 20 I ∣ VTT < ∣ 1.5A -30 30 Load Regulation of VTT (VTTREF-VTT) VOSVTT I ∣ VTT <3A ∣ -40 40 mV VTT=VDDQSNS/2*0.95,PGOOD=HI 3 4 Source Current Limit of VTT IVTTOCLSRC VTT=0 1.5 2 A VTT=VDDQSNS/2*1.05,PGOOD=HI 3 4 Sink Current Limit of VTT IVTTOCLSNK VTT=VDDQSNS 1.5 2 A Leakage Current of VTT IVTTLK S5=Hi,S3=Lo 0.01 uA Discharge Current of VTT IVTTDIS S5=Lo, VDDQSNS=0V,VTT=0.5V 10 20 mA DDR1(VLDOIN=VDDQSNS=2.5V) 1.25 DDR2(VLDOIN=VDDQSNS=1.8V) 0.9 Output Voltage of VTTREF VTTREF DDR3(VLDOIN=VDDQSNS=1.5V) 0.75 V Load Regulation of VTTREF ∆VTTREF I ∣ VTTREF < ∣ 10mA -20 20 mV High Level Input Voltage VIH S3 & S5 pin 1.6 Low Level Input Voltage VIL S3 & S5 pin 1 V Logic Input Leakage Current IILEAK S3 & S5 pin -1 1 uA Thermal Shutdown Temperature TSD VIN=3V~5.5V 160 Thermal Shutdown Hysteresis ∆TSD VIN=3V~5.5V 20 °C |
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