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DSP8-12AS 数据表(PDF) 5 Page - IXYS Corporation |
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DSP8-12AS 数据表(HTML) 5 Page - IXYS Corporation |
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5 / 5 page ![]() DSP8-12AS 0.001 0.01 0.1 1 40 60 80 100 2 3 4 5 6 7 8 0 1 1 101 102 0.6 0.8 1.0 1.2 1.4 1.6 0 4 8 12 16 20 0 2 4 6 8 10 12 0 4 8 12 16 0 25 50 75 100 125 150 175 200 1 10 100 1000 10000 0.0 0.4 0.8 1.2 1.6 0 50 100 150 200 0 4 8 12 16 20 24 28 50 Hz, 80% V RRM T VJ = 45°C T VJ = 150°C T VJ = 150°C V R = 0 V T VJ = 45°C I F [A] V F [V] I FSM [A] t [s] I 2t [A 2s] t [ms] P tot [W] I F(AV)M [A] T amb [°C] I F(AV)M [A] T C [°C] Z thJC [K/W] Fig. 1 Forward current versus voltage drop per diode Fig. 2 Surge overload current Fig. 3 I 2t versus time per diode Fig. 4 Power dissipation vs. direct output current and ambient temperature Fig. 5 Max. forward current vs. case temperature Fig. 6 Transient thermal impedance junction to case t [ms] Constants for Z thJC calculation: i R thi (K/W) t i (s) 1 0.155 0.0005 2 0.332 0.0095 3 0.713 0.17 4 0.3 0.8 5 0.00001 0.00001 T VJ = 150°C 125°C 25°C DC = 1 0.5 0.4 0.33 0.17 0.08 DC = 1 0.5 0.4 0.33 0.17 0.08 R thJA: 4 K/W 8 K/W 10 K/W 12 K/W 16 K/W 20 K/W Rectifier IXYS reserves the right to change limits, conditions and dimensions. 20130107b Data according to IEC 60747and per semiconductor unless otherwise specified © 2013 IXYS all rights reserved |
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