RW1C026ZP datasheet(2/12 Pages) ROHM

2 / 12 page

RW1C026ZP

Datasheet

lThermal resistance

Parameter

Symbol

Values

Unit

Min.

Typ.

Max.

Thermal resistance, junction - ambient

RthJA*2

179

℃/W

lElectrical characteristics (Ta = 25°C)

Parameter

Symbol

Conditions

Values

Unit

Min.

Typ.

Max.

Drain - Source breakdown

voltage

V(BR)DSS VGS = 0V, ID = -1mA

-20

Breakdown voltage

temperature coefficient

　ΔV(BR)DSS　 ID = -1mA

-21.9

mV/℃

　　 ΔTj 　　 referenced to 25℃

Zero gate voltage

drain current

IDSS

VDS = -20V, VGS = 0V

-1

μA

Gate - Source leakage current

IGSS

VGS = ±10V, VDS = 0V

±10

μA

Gate threshold voltage

VGS(th)

VDS = -10V, ID = -1mA

-0.3

-1

Gate threshold voltage

temperature coefficient

　ΔVGS(th) 　 ID = -1mA

2.4

mV/℃

　　 ΔTj 　　 referenced to 25℃

Static drain - source

on - state resistance

RDS(on)*3

VGS = -4.5V, ID = -2.5A

mΩ

VGS = -2.5V, ID = -1.2A

VGS = -1.8V, ID = -1.2A

130

VGS = -1.5V, ID = -0.5A

100

200

Transconductance

gfs*3

VDS = -10V, ID = -2.5A

2.2

*1 Pw ≦ 10μs, Duty cycle ≦ 1%

*2 MOUNTED ON A CERAMIC BOARD

*3 Pulsed

www.rohm.com

2/11

20140707 - Rev.001

RW1C026ZP 数据表(PDF) 2 Page - Rohm

RW1C026ZP 数据表(HTML) 2 Page - Rohm

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12

数据表下载