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FST3257 数据表(PDF) 5 Page - ON Semiconductor |
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FST3257 数据表(HTML) 5 Page - ON Semiconductor |
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5 / 12 page ![]() © 1997 Fairchild Semiconductor Corporation www.fairchildsemi.com FST3257 • Rev. 1.0.3 4 DC Electrical Characteristics TA=-40 to +85°C Symbol Parameter Conditions VCC (V) Min. Typ. (3) Max. Units VIK Clamp Diode Voltage IIN=-18mA 4.5 -1.2 V 3.0 to 3.6 (5) 1.8 VIH High-Level Input Voltage 4.0 to 5.5 2.0 V 3.0 to 3.6 (5) 0.7 VIL Low-Level Input Voltage 4.0 to 5.5 0.8 V IIN Input Leakage Current 0 ≤ V IN ≤ 5.5 5.5 ±1.0 µA IOZ Off-state Leakage Current 0 ≤ A, B ≤ V CC 5.5 ±1.0 µA VIN=0V, IIN=64mA 3.3 (5) 13 20 VIN=0V, IIN=30mA 3.3 (5) 28 40 VIN=2.4V, IIN=15mA 3.3 (5) 200 230 VIN=2.4V, IIN=15mA 3.0 (5) 210 250 VIN=0V, IIN=64mA 4.5 4 7 VIN=0V, IIN=30mA 4.5 4 7 VIN=2.4V, IIN=15mA 4.5 8 15 RON Switch On Resistance (4) VIN=2.4V, IIN=15mA 4.0 11 20 Ω ICC Quiescent Supply Current VIN=VCC or GND, IOUT=0, 5.5 3 µA ΔI CC Increase in ICC per input One Input at 3.4V, Other inputs at VCC or GND 5.5 2.5 mA Notes: 3. Typical values are at nominal VCC for the VCC range and TA=25°C. 4. Measured by the voltage drop between A and B pins at the indicated current through the switch. On resistance is determined by the lower of the voltages on the A or B pins. 5. This parameter is guaranteed by design, but is not tested. |
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