STGD5NB120SZ datasheet(2/13 Pages) STMICROELECTRONICS

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STGD5NB120SZ-1 - STGD5NB120SZ

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Table 3: Absolute Maximum ratings

( ) Pulse width limited by safe operating area

(1) VCE = 50 V , IAV = 3.3 A

Table 4: Thermal Data

ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)

Table 5: On/Off

Symbol

Parameter

Value

Unit

VCES

Collector-Emitter Voltage (VGS = 0)

1200

VECR

Emitter-Collector Voltage

VGE

Gate-Emitter Voltage

±20

Collector Current (continuous) at TC = 25°C

Collector Current (continuous) at TC = 100°C

ICM ( )

Collector Current (pulsed)

PTOT

Total Dissipation at TC = 25°C

Derating Factor

0.44

W/°C

Eas (1)

Single Pulse Avalanche Energy at Tj = 25°C

Single Pulse Avalanche Energy at Tj = 100°C

Tstg

Storage Temperature

–55 to 150

°C

Operating Junction Temperature range

150

°C

Min.

Typ.

Max.

Rthj-case

Thermal Resistance Junction-case

2.27

°C/W

Rthj-amb

Thermal Resistance Junction-ambient

100

°C/W

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VBR(CES)

Collector-Emitter Breakdown

Voltage

IC = 10 mA, VGE = 0 V

1200

ICES

Collector cut-off Current

(VGE = 0)

VCE = 900 V

VCE = 900 V, Tj = 125 °C

250

µA

IGES

Gate-Emitter Leakage

Current (VCE = 0)

VGE = ±20V , VCE = 0 V

±100

VGE(th)

Gate Threshold Voltage

VCE = VGE, IC = 250 µA

VGE

Gate Emitter Voltage

VCE =2.5 V, IC = 2 A,

Tj = 25÷125°C

6.5

VCE(sat)

Collector-Emitter Saturation

Voltage

VGE = 15V, IC = 5 A

VGE = 15V, IC = 5 A, Tj =125°C

1.3

1.2

2.0

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