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2SC5006 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC5006 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page  INCHANGE Semiconductor isc website：www.iscsemi.cn isc & iscsemi is registered trademark 2 isc Silicon NPN RF Transistor 2SC5006 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified, Pulse Measurement PW ≤ 350 µs, Duty Cycle ≤ 2 % SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT ICBO Collector Cutoff Current VCB= 10V; IE= 0 1 μ A IEBO Emitter Cutoff Current VEB= 1V; IC= 0 1 μ A hFE DC Current Gain IC= 7mA ; VCE= 3V 80 160 fT Current-Gain—Bandwidth Product IC= 7mA ; VCE= 3V 3.0 GHz Cre Feed-Back Capacitance IE= 0 ; VCB= 3V;f= 1.0MHz 1.5 pF ︱ S21e︱2 Insertion Power Gain IC= 7mA ; VCE= 3V;f= 1.0GHz 7 dB NF Noise Figure IC= 7mA ; VCE= 3V;f= 1.0GHz 2.5 dB |
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