3CD4C datasheet(1/2 Pages) ISC

部件名	3CD4C

功能描述	isc Silicon PNP Power Transistor

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制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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isc Silicon PNP Power Transistor

3CD4C

DESCRIPTION

·

Collector-Emitter Breakdown Voltage-

: V(BR)CEO= -80V(Min.)

·

DC Current Gain-

: hFE=10-180@IC= -1A

·

Collector-Emitter Saturation Voltage-

: VCE(sat)= -1.5V(Max)@ IC= -1A

·

Minimum Lot-to-Lot variations for robust device

performance and reliable operation

APPLICATIONS

·

Power amplifier

·

Low speed switching

·

Power regulator

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-80

V

VCEO

Collector-Emitter Voltage

-80

V

VEBO

Emitter-Base Voltage

-4

V

IC

Collector Current-Continuous

-2

A

PC

Collector Power Dissipation

@TC=75℃

20

W

TJ

Junction Temperature

-55~150

℃

Tstg

Storage Temperature

-55~150

℃

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3CD4C 数据表(PDF) 1 Page - Inchange Semiconductor Company Limited

3CD4C 数据表(HTML) 1 Page - Inchange Semiconductor Company Limited

类似零件编号 - 3CD4C

类似说明 - 3CD4C

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3CD4C 数据表(PDF) 1 Page - Inchange Semiconductor Company Limited

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类似零件编号 - 3CD4C

类似说明 - 3CD4C

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