BUP52 datasheet(1/2 Pages) ISC

部件名	BUP52

功能描述	isc Silicon NPN Power Transistor

PDF	2 Pages

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制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc website：www.iscsemi.com

isc & iscsemi is registered trademark

1

isc Silicon NPN Power Transistor

BUP52

DESCRIPTION

·

High DC Current Gain-

: hFE>20@IC= 20A

·

Low Collector-Emitter Saturation Voltage

·

Minimum Lot-to-Lot variations for robust device

performance and reliable operation

APPLICATIONS

·

Ideally suited for Motor Control, Switching and Linear

Applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

250

V

VCEO

Collector-Emitter Voltage

200

V

VEBO

Emitter-Base Voltage

10

V

IC

Collector Current-Continuous

70

A

ICM

Peak collector current

90

A

PC

Collector Power Dissipation@TC=25℃

300

W

TJ

Junction Temperature

-55~200

℃

Tstg

Storage Temperature Range

-55~200

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

0.58

℃

/W

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