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FSUSB242 数据表(PDF) 7 Page - ON Semiconductor |
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FSUSB242 数据表(HTML) 7 Page - ON Semiconductor |
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7 / 12 page ![]() FSUSB242 CONFIDENTIAL AND PROPRIETARY NOT FOR PUBLIC RELEASE www.onsemi.com 7 Table 5. DC ELECTRICAL CHARACTERISTICS (continued) (Unless otherwise specified: Recommended TA and TJ temperature ranges. All typical values are at TA =25°C and VDD = 4.2 V unless otherwise specified.) Symbol Unit TA = −40 to +855C TJ = −40 to +1255C Conditions VDD (V) Characteristic Symbol Unit Max Typ Min Conditions VDD (V) Characteristic BASIC OPERATION DEVICE IOZ Off State Leakage 2.7 to 5.5 HSD ± ≥ 0 V, HSD1±, HSD2 ± ≤ 3.6 V −3 5 mA BASIC OPERATION HSD SWITCH RON HSD Path On Resistance 2.7 to 5.5 IOUT = 8 mA, VSW = 0 V to 0.4 V 5 W DRON HSD Path Delta RON 2.7 to 5.5 IOUT = 8 mA, VSW = 0 V to 0.4 V 0.15 W VIH SEL Input Voltage High 2.7 to 5.5 1.3 V VIM SEL Input Voltage Middle (Note 2) 2.7 to 5.5 0.8 1. 0 V VIL SEL Input Voltage Low 2.7 to 5.5 0.5 V Zfloat Impedance to VDD or GND detected as a Float including VDD =0 2.7 to 5.5 2.5 M W VOV_TRIP1 Input OVP Lockout for HSD1 2.7 to 5.5 VHSD± Rising, SEL = 0 3.6 3.8 4 V VHSD± Falling, SEL = 0 3.3 3.5 VOV_TRIP2 Input OVP Lockout for HSD2 2.7 to 5.5 VHSD± Rising, SEL = 1 4.5 4.7 4.9 V VHSD± Falling, SEL = 1 4.2 4.4 VOV_HYS Input OVP Hysteresis 2.7 to 5.5 0.3 V VNV_TRIP Input Negative Voltage Lockout 2.7 to 5.5 VHSD± Falling −1.0 V VHSD± Rising −0.7 VNV_HYS Input OVP Hysteresis 2.7 to 5.5 0.3 V VCL Clamping Voltage 2.7 to 5.5 VHSD± ≥ VOV_TRIP 4.5 V VUVLO Under−Voltage Lockout VDD Rising 2.4 2.7 V VDD Falling 2.3 TSD Thermal Shutdown (Note 2) Shutdown Threshold 150 °C Return from Shutdown 130 Hysteresis 20 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Guaranteed by characterization or Design, not production tested. |
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