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ESDS302DBVR 数据表(PDF) 8 Page - Texas Instruments |
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ESDS302DBVR 数据表(HTML) 8 Page - Texas Instruments |
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8 / 21 page ![]() 8 ESDS302, ESDS304 SLVSEG8A – MAY 2018 – REVISED SEPTEMBER 2018 www.ti.com Product Folder Links: ESDS302 ESDS304 Submit Documentation Feedback Copyright © 2018, Texas Instruments Incorporated 7 Detailed Description 7.1 Overview The ESDS304, ESDS302 devices are uni-directional ESD Protection Diode with ultra-low capacitance. This device can dissipate ESD strikes above the maximum level specified by the IEC 61000-4-2 International Standard. The ultra-low capacitance makes this device ideal for protecting any super high-speed signal pins. 7.2 Functional Block Diagram 7.3 Feature Description The I/O pins of ESDS304 and ESDS302 can withstand surge events (IEC 61000-4-5, 8/20 μs waveform) up to 12 A and 85 W. These devices also provide ESD protection up to ±30-kV contact and ±30-kV air gap per IEC 61000-4-2 standard. The I/O pins can withstand an electrical fast transient burst of up to 80 A (IEC 61000-4-4 5/50 ns waveform, 4 kV with 50-Ω impedance). The capacitance between each I/O pin to ground is 2.3 pF (typical) and 2.8 pF (maximum). This device supports data rates up to 1 Gbps. The reverse DC breakdown voltage of each I/O pin is a minimum of 4.5 V. This ensures that sensitive equipment is protected from surges above the reverse standoff voltage of 3.6 V. The I/O pins feature an ultra-low leakage current of 50 nA (maximum) with a bias of 3.6 V. This device features an industrial operating range of –40°C to +125°C. 7.4 Device Functional Modes The ESDS304, ESDS302 devices are a passive integrated circuit that triggers when voltages are above VBRF or below 0.7 V. During ESD events, voltages as high as ±30 kV (air) can be directed to ground via the internal diode network. When the voltages on the protected line fall below the trigger levels of ESDS304, ESDS302 (usually within a few nano-seconds) the devices reverts to passive. |
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