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2ST501T 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2ST501T 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon NPN Darlington Power Transistor 2ST501T ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)EBO Emitter-Base Breakdown Voltage IE= 150mA; IC= 0 6 V VCEO(sus) Collector-Emitter Sustaining Voltage (IB = 0 ) IC = 10 mA, 330 V ICEO Collector Cut-off Current (IB = 0) VCE = 300 V 0.1 mA ICBO Collector Cutoff Current VCB= 300V; IE= 0 0.1 mA IEBO Emitter Cutoff Current VEB= 6V; IC=0 2 mA hFE DC Current Gain IC= 2A; VCE= 2V 2000 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 2mA 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 2mA 2.0 V |
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