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ISC1862 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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ISC1862 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademar 2 isc Silicon NPN RF Transistor ISC1862 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 1uA ; IE= 0 20 V ICBO Collector Cutoff Current VCB= 10V; IE= 0 0.1 μ A IEBO Emitter-Base Cutoff Current VEB= 1V; IE= 0 0.1 μ A hFE DC Current Gain IC= 10mA ; VCE= 6V 90 250 fT Current-Gain—Bandwidth Product VCE=10V,IC=20mA 5 7 GHz Cre Output feedback capacitance VCB=10V,IE=0mA,f=1MHz 0.65 pF | S21e |2 Power gain VCE=10V,IC=20mA,f=1GHz 11 dB NF Noise factor VCE=10V,IC=7mA,f=1GHz 1.5 dB hFE Classifications step B C D label R24 R25 hFE 90-140 130-180 170-250 |
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