4

REF34-Q1

SBAS901A – JULY 2018 – REVISED SEPTEMBER 2018

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Copyright © 2018, Texas Instruments Incorporated

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

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MIN

MAX

UNIT

Input voltage

IN

13

V

EN

–0.3

IN + 0.3

Output voltage

–0.3

5.5

V

Output short circuit current

20

mA

Temperature

–55

150

°C

–65

170

(1)

AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

7.2 ESD Ratings

VALUE

UNIT

Electrostatic discharge

±2500

V

Charged-device model (CDM), per AEC Q100-011

±1500

(1)

Dropout voltage

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

IN

(1)

12

V

EN

Enable voltage

0

IN

V

Output current

–10

10

mA

Operating temperature

–40

25

125

°C

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

7.4 Thermal Information

REF34-Q1

UNIT

DBV (SOT-23)

6 PINS

Junction-to-ambient thermal resistance

122.6

°C/W

Junction-to-case (top) thermal resistance

80.2

°C/W

Junction-to-board thermal resistance

42

°C/W

Junction-to-top characterization parameter

23.2

°C/W

Junction-to-board characterization parameter

41.9

°C/W