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ISC68 数据表(PDF) 1 Page - Inchange Semiconductor Company Limited

部件名 ISC68
功能描述  isc Silicon PNP Power Transistor
PDF  2 Pages
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制造商  ISC [Inchange Semiconductor Company Limited]
网页  http://www.iscsemi.cn
标志 ISC - Inchange Semiconductor Company Limited

ISC68 数据表(HTML) 1 Page - Inchange Semiconductor Company Limited

  ISC68 Datasheet HTML 1Page - Inchange Semiconductor Company Limited ISC68 Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon PNP Power Transistor
ISC68
DESCRIPTION
·
Excellent Safe Operating Area
·
High DC Current Gain- hFE=15(Min)@IC = -8A
·
Low Saturation Voltage-
: VCE(sat)= -1.4V(Max)@ IC = -8A
·
Minimum Lot-to-Lot variations for robust device performance
and reliable operation.
APPLICATIONS
·
Designed for high power audio ,disk head positioners and
other linear application.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
0.7
℃
/W
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-400
V
VCEO
Collector-Emitter Voltage
-250
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-16
A
IB
Base Current-Continuous
-5
A
PC
Collector Power Dissipation @TC=25℃
250
W
TJ
Junction Temperature
200
℃
Tstg
Storage Temperature
-65~200
℃


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