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ISCN1843P 数据表(PDF) 1 Page - Inchange Semiconductor Company Limited

部件名 ISCN1843P
功能描述  isc Silicon PNP Power Transistor
PDF  2 Pages
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制造商  ISC [Inchange Semiconductor Company Limited]
网页  http://www.iscsemi.cn
标志 ISC - Inchange Semiconductor Company Limited

ISCN1843P 数据表(HTML) 1 Page - Inchange Semiconductor Company Limited

  ISCN1843P Datasheet HTML 1Page - Inchange Semiconductor Company Limited ISCN1843P Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc website： www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon PNP Power Transistor
ISCN1843P
DESCRIPTION
·
High Current Capability
·
High Power Dissipation
·
High Collector-Emitter Breakdown Voltage-
: V(BR)CEO=- 250V(Min)
·
Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS
·
Power amplifier applications
·
High-End Consumer Audio Products
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-250
V
VCEO
Collector-Emitter Voltage
-250
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-15
A
PC
Collector Power Dissipation
@ TC=25℃
200
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃


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