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US1652L-S08-R 数据表(PDF) 3 Page - Unisonic Technologies |
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US1652L-S08-R 数据表(HTML) 3 Page - Unisonic Technologies |
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3 / 9 page ![]() US1652 LINEAR INTEGRATED CIRCUIT UNISONIC TECHNOLOGIES CO., LTD 3 of 9 www.unisonic.com.tw . QW-R119-027.A ABSOLU T E M AX I M U M RAT I N G (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Supply Voltage VCC 33 V Input Voltage to FB Pin VFB -0.3 ~ 6.5 V Input Voltage to CS Pin VCS -0.3 ~ 6.5 V Junction Temperature TJ +150 °C Operating Temperature TOPR -40 ~ +125 °C Storage Temperature TSTG -50 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. OPERAT I N G RAN GE PARAMETER SYMBOL RATINGS UNIT Supply Voltage VCC 10 ~ 24 V VCC-G Pin Series Resistor VCC_GR 51 ~ 1000 Ω Open Frame Output Power for 85~264VAC PO_MAX 12 W ELECT RI CAL CH ARACT ERI ST I CS (TA=25°C, VCC=15V, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT SUPPLY SECTION Start Up Current IST VCC = VTHD(ON)-1V 2 15 μA Supply Current with Switch IOP VFB= 3.5V 3 5.5 mA VDD Zener Clamp Voltage vCLAMP IVDD=20mA 29 31 33 V UNDER-VOLTAGE LOCKOUT SECTION Start Threshold Voltage VTHD(ON) 18 20 22 V Min. Operating Voltage VCC(MIN) 6.5 8 9.5 V CONTROL SECTION Feedback Source Current IFB VFB=0 240 uA VFB Open Loop Voltage Level VFB_Open 5.4 V Burst-Mode Out FB Voltage VFB(OUT) VCS =0 1.42 V Burst-Mode Enter FB Voltage VFB(IN) VCS =0 1.35 V Normal Initial VFB = 3.5V 60 65 70 kHz Switching Frequency Burst mode base frequecy F(SW) 20 kHz Duty Cycle DMAX VFB=3.5V, VCS=0 70 80 90 % Frequency Hopping FJ(SW) -9 +9 % Frequency Variation VS VCC Deviation FDV VCC=10 ~ 20V 10 % Frequency Variation VS Temperature Deviation FDT T=-40 ~ 110°C 10 % Soft-Start Time TSOFTS 5 ms PROTECTION SECTION OVP Threshold VOVP VFB=3.5V 25 26 27 V OLP Threshold VFB(OLP) VCS=0 4.2 V Delay Time Of OLP TD-OLP 60 88 120 ms OTP Threshold T(THR) 150 °C CURRENT LIMITING SECTION Leading Edge Blanking Time tLEB 200 350 550 nS Peak Current Limitation VSENSE-H VFB=3.9V 0.92 V Threshold Voltage For Valley VSENSE-L VFB=3.9V 0.73 0.79 0.85 V POWER MOS-TRANSISTOR SECTION Drain-Source Breakdown Voltage VDSS VGS=0V, ID=250 μA 650 V Turn-on voltage between gate and source VTH VDS=VGS, ID=250 μA 2 4 V Drain-Source Diode Continuous Source Current IS 2 A Static Drain-Source On-State Resistance RDS(ON) VGS=10V,ID=0.8A 4 5.5 Ω |
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