Wideband Power Amplifier

RWP15100-R0

Korean Facilities : 82-31-8069-3036 / rfsales@rfhic.com

All specifications may change without notice

US Facilities : 919-677-8780 / sales@rfhicusa.com

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Version 1.0

Product Features

Applications

• GaN on SiC Broadband High Power Amplifier

• 500 ~ 2500MHz Operation Bandwidth

• Saturated Power Gain 42dB min.

• 100W Psat (min )

• Broadcasting

•Telecommunication

•Medical

Description

RWP15100-R0 is designed for Broadcasting, Telecommunication, Medical and Others. Its operating frequency range is from 500MHz

~ 2500MHz.

RWP15100-R0 used GaN on SiC technology and attached on an aluminum sub carrier with full in/out matching for broadband

performance is already applied.

Thermal control has been dramatically improved by using patented technology.

PARAMETER

UNIT

MIN

TYP

MAX

Conditions

Bandwidth

MHz

500

-

2500

-

dBm

50

-

-

500MHz ~ 2500MHz

Power Gain

dB

42

-

46

@Pi = 8dBm

Gain Flatness vs Frequency

dBp-p

-

2.0

4.0

@Pi = 8dBm

Gain Variation vs Temperature

dB

-

-

±1.5

@Pi = 8dBm, -20°C ~ 60°C

Input Return Loss

dB

-

-15

-7

-

N

dBc

-

-

-10

@Pi = 8dBm, CW 1-tone

Operating Voltage

V

32

33

34

VDD(=Vds)

Quiescent Current consumption

A

1.5

1.7

1.9

-

Current Consumption

A

-

10

14

@Pi = 8dBm, CW 1-tone, 33V

Power Added Efficiency

%

25

35

-

@Pi=8dBm

Spurious

dBc

-

-

-60

-

On/Off Switching Time

usec

-

4

5

On : TTL "Low"

Off : TTL "High"(200mA@Disable)

Recommended Conditions

PARAMETER

MIN

TYP

MAX

UNIT

Operating ambient Temperature

-20

-

60

°C

Storage Temperature

-40

-

105

°C