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2SC4632LS 数据表(PDF) 2 Page - Sanyo Semicon Device |
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2SC4632LS 数据表(HTML) 2 Page - Sanyo Semicon Device |
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2 / 3 page ![]() 2SC4632LS No.3701-2/3 ITR07332 0.4 0.6 1.0 0.8 0.2 0 024 8 10 6 IC -- VCE ITR07331 IB=0 Cob -- VCB hFE -- IC ITR07334 5 5 3 2 7 7 1.0 10 0.1 1.0 52 3 5 10 23 5 100 23 5 f T -- IC ITR07333 5 µA 10 µA 15 µA 20 µA 25 µA 30 µA 35 µA ITR07335 VBE(sat) -- IC 1.0 7 5 3 2 5 3 2 0.1 1.0 0.1 7 5 3 2 2 1.0 0.1 2 77 55 10 32 2 7 5 3 ITR07336 VCE(sat) -- IC 7 1.0 0.1 10 52 7 35 2 2 7 35 IC / IB=5 IC / IB=5 f=1MHz 5 5 3 3 2 2 7 7 1.0 10 0.1 1.0 5 7 23 5 7 23 5 VCE=10V Ta=25 °C 5 5 3 2 7 7 10 100 1.0 0.1 57 2 3 5 2 72 3 5 7 10 Ta=120 °C 25°C --40°C Ta= --40°C 25°C 120°C 45µ A 50µ A --40 °C Ta=120 °C 25 °C Collector-to-Emitter Voltage, VCE -- V Collector Current, IC -- mA Collector-to-Base Voltage, VCB -- V Collector Current, IC -- mA Collector Current, IC -- mA Collector Current, IC -- mA Continued from preceding page. Ratings Parameter Symbol Conditions min typ max Unit Collector-to-Emitter Saturation Voltage VCE(sat) IC=1mA, IB=0.2mA 5 V Base-to-Emitter Saturation Voltage VBE(sat) IC=1mA, IB=0.2mA 2 V Collector-to-Base Breakdown Voltage V(BR)CBO IC=100µA, IE=0 1500 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=1mA, RBE=∞ 1200 V Emitter-to-Base Breakdown Voltage V(BR)EBO IE=100µA, IC=0 5 V Output Capacitance Cob VCB=100V, f=1MHz 1.6 pF Thermal Resistance Rthj-c Junction – case 12.5 °C / W |
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