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2SC4633LS 数据表(PDF) 2 Page - Sanyo Semicon Device |
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2SC4633LS 数据表(HTML) 2 Page - Sanyo Semicon Device |
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2 / 3 page ![]() 2SC4633LS No.3702-2/3 ITR07341 0.8 1.2 2.0 1.6 0.4 0 024 8 10 6 IC -- VCE ITR07340 IB=0 Cob -- VCB hFE -- IC ITR07343 5 5 3 2 2 7 7 1.0 10 0.1 1.0 52 3 5 10 23 5 100 23 5 f T -- IC ITR07342 10 µA 40 µA 20 µA 50 µA 60 µA 30 µA ITR07344 VBE(sat) -- IC 1.0 7 5 3 2 5 3 2 0.1 1.0 0.1 7 7 5 5 5 3 3 2 2 ITR07345 VCE(sat) -- IC 1.0 0.1 10 52 3 5 2 2 35 35 1.0 0.1 10 52 3 5 2 2 35 35 IC / IB=5 IC / IB=5 f=1MHz 5 5 3 3 2 2 7 7 1.0 10 0.1 1.0 57 2 3 57 10 23 5 7 VCE=10V Ta=25 °C 5 5 3 2 7 7 10 100 1.0 0.1 52 3 5 2 23 3 55 10 Ta=120 °C 25°C --40°C Ta= --40°C 25°C 120°C VCE=5V --40 °C Ta=120 °C 25 °C 80 µA 90 µA Collector-to-Emitter Voltage, VCE -- V Collector Current, IC -- mA Collector-to-Base Voltage, VCB -- V Collector Current, IC -- mA Collector Current, IC -- mA Collector Current, IC -- mA Continued from preceding page. Ratings Parameter Symbol Conditions min typ max Unit Collector-to-Emitter Saturation Voltage VCE(sat) IC=3mA, IB=0.6mA 5 V Base-to-Emitter Saturation Voltage VBE(sat) IC=3mA, IB=0.6mA 2 V Collector-to-Base Breakdown Voltage V(BR)CBO IC=100µA, IE=0 1500 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=1mA, RBE=∞ 1200 V Emitter-to-Base Breakdown Voltage V(BR)EBO IE=100µA, IC=0 5 V Output Capacitance Cob VCB=100V, f=1MHz 2.0 pF Thermal Resistance Rthj-c Junction – case 8.3 °C / W |
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